Voltage controlled switches with ultrahigh GOn/GOff ratio on single layer graphene

Huaizhe Xu; Sheng Feng; Yaping Zhang

doi:10.1016/j.jmmm.2018.10.097

Voltage controlled switches with ultrahigh G_On/G_Off ratio on single layer graphene

Huaizhe Xu^*
, Sheng Feng
, Yaping Zhang

^*此作品的通讯作者

物理学院

Beihang University
University of Nottingham Ningbo China

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

A method for realizing voltage-controlled conductance switching using single layer graphene is proposed and numerically studied and presented. The ultrahigh conductance On/Off ratio (G_On/G_Off) is achieved through the “closing/opening” of an energy bandgap in single layer graphene. The G_On/G_Off reaches as high as ∼152 when the bandgap is of only ∼12 meV (B = 3) for the simulated device configuration. Furthermore, the G_On/G_Off ratio increases parabolically with the increasing of the product of U and d (i.e. U∗d) and increases exponentially with the increasing of the product of B and b (i.e. B∗b). In addition, the G_On/G_Off ratio increases with the increasing of the unit cell number N of the device. These features of merit provide ways for the optimization of the performance and properties of the switch.

源语言	英语
页（从-至）	365-369
页数	5
期刊	Journal of Magnetism and Magnetic Materials
卷	473
DOI	https://doi.org/10.1016/j.jmmm.2018.10.097
出版状态	已出版 - 1 3月 2019

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10.1016/j.jmmm.2018.10.097

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title = "Voltage controlled switches with ultrahigh GOn/GOff ratio on single layer graphene",

abstract = "A method for realizing voltage-controlled conductance switching using single layer graphene is proposed and numerically studied and presented. The ultrahigh conductance On/Off ratio (GOn/GOff) is achieved through the {\textquotedblleft}closing/opening{\textquotedblright} of an energy bandgap in single layer graphene. The GOn/GOff reaches as high as ∼152 when the bandgap is of only ∼12 meV (B = 3) for the simulated device configuration. Furthermore, the GOn/GOff ratio increases parabolically with the increasing of the product of U and d (i.e. U∗d) and increases exponentially with the increasing of the product of B and b (i.e. B∗b). In addition, the GOn/GOff ratio increases with the increasing of the unit cell number N of the device. These features of merit provide ways for the optimization of the performance and properties of the switch.",

author = "Huaizhe Xu and Sheng Feng and Yaping Zhang",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

month = mar,

day = "1",

doi = "10.1016/j.jmmm.2018.10.097",

language = "英语",

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TY - JOUR

T1 - Voltage controlled switches with ultrahigh GOn/GOff ratio on single layer graphene

AU - Xu, Huaizhe

AU - Feng, Sheng

AU - Zhang, Yaping

PY - 2019/3/1

Y1 - 2019/3/1

N2 - A method for realizing voltage-controlled conductance switching using single layer graphene is proposed and numerically studied and presented. The ultrahigh conductance On/Off ratio (GOn/GOff) is achieved through the “closing/opening” of an energy bandgap in single layer graphene. The GOn/GOff reaches as high as ∼152 when the bandgap is of only ∼12 meV (B = 3) for the simulated device configuration. Furthermore, the GOn/GOff ratio increases parabolically with the increasing of the product of U and d (i.e. U∗d) and increases exponentially with the increasing of the product of B and b (i.e. B∗b). In addition, the GOn/GOff ratio increases with the increasing of the unit cell number N of the device. These features of merit provide ways for the optimization of the performance and properties of the switch.

AB - A method for realizing voltage-controlled conductance switching using single layer graphene is proposed and numerically studied and presented. The ultrahigh conductance On/Off ratio (GOn/GOff) is achieved through the “closing/opening” of an energy bandgap in single layer graphene. The GOn/GOff reaches as high as ∼152 when the bandgap is of only ∼12 meV (B = 3) for the simulated device configuration. Furthermore, the GOn/GOff ratio increases parabolically with the increasing of the product of U and d (i.e. U∗d) and increases exponentially with the increasing of the product of B and b (i.e. B∗b). In addition, the GOn/GOff ratio increases with the increasing of the unit cell number N of the device. These features of merit provide ways for the optimization of the performance and properties of the switch.

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DO - 10.1016/j.jmmm.2018.10.097

M3 - 文章

AN - SCOPUS:85055525936

SN - 0304-8853

VL - 473

SP - 365

EP - 369

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Voltage controlled switches with ultrahigh GOn/GOff ratio on single layer graphene

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Voltage controlled switches with ultrahigh G_On/G_Off ratio on single layer graphene