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UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor

  • Sheng Xue Yang
  • , Jian Gong
  • , Jing Bo Li*
  • , Jian Bai Xia
  • *此作品的通讯作者
  • CAS - Institute of Semiconductors
  • Northeast Normal University

科研成果: 期刊稿件文章同行评审

摘要

A photoresponsive sensor that UV light controlled depletion zone thickness was report. This p-n junction depletion zone lies between the n-type ZnS and p-type polyaniline. The photoresponsive sensors were constructed by combining polyaniline/ZnS p-n heterojunction and ZnO nanorods. Different from the traditional photosensitive nanomaterials whose conductivity increases with UV illumination intensity, the conductivity of the photoresponsive sensor studied in this articles decreased when the UV light was turned on.

源语言英语
页(从-至)1413-1418
页数6
期刊Chinese Journal of Luminescence
34
11
DOI
出版状态已出版 - 11月 2013
已对外发布

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