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Unwanted turn-on of SiC JFET bi-directional switches under influence of parasitic parameters

  • Lina Wang
  • , Xiangcai Zhang
  • , Jie Deng
  • , Junyi Yang
  • , Olanrewaju Kabir Oladele
  • , Yue Zhao
  • Beihang University
  • University of Arkansas, Fayetteville

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

SiC JFET bi-directional switches (BDS) are widely used in construction of matrix converters, multi-level converters, solid state switches, etc. In this research work, the phenomenon of unwanted turn-on (UTO) of SiC JFET-based BDS and its related constant envelop oscillation is investigated. This phenomenon is critical to power conversion systems' stability and reliability. Firstly, the roots of UTO are investigated by probing into the gate drive circuits, some theoretical analysis on the unique configuration of BDS is presented. Then some methods for mitigating the UTO behavior and constant envelop oscillation are proposed. Finally, the effectiveness of the proposed methods is verified by the experimental results.

源语言英语
主期刊名Proceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
出版商Institute of Electrical and Electronics Engineers Inc.
4194-4199
页数6
ISBN(电子版)9781538611272
DOI
出版状态已出版 - 15 12月 2017
活动43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 - Beijing, 中国
期限: 29 10月 20171 11月 2017

出版系列

姓名Proceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
2017-January

会议

会议43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
国家/地区中国
Beijing
时期29/10/171/11/17

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