@inproceedings{fc4630c3b3d245dd8305cfd710b2e754,
title = "Uniformity of device performance improvement for the SOT-MRAM by optimizing the lithography process at 200-mm-wafer manufacturing platform",
abstract = "We examined the influence of process uniformity on the device performance for the spin-orbit torque (SOT) magnetic random access memory (MRAM) devices. By optimizing the lithography process through changing the multi-energies exposure compensation and pretreatment in developing, we demonstrated 1.6 times sigma improvement of the critical dimensions (CD), leading to 49.5\%, 54.2\%, and 63.2\% sigma\% reduction for SOT channel resistance (Rb), magnetic tunnel junction (MTJ) resistance (Rmin) and switching current (IC) respectively. These promising results will help to deliver SOT-MRAM to the mass manufacturing in the semiconductor industry.",
keywords = "MTJ, Multi-energies exposure compensation, SOT-MRAM, Uniformity.",
author = "Bowen Man and Xiaowei Yang and Qingsong Zhao and Cong Zhang and Shuqin Lv and Shiyang Lu and Kaihua Cao and Hongxi Liu and Gefei Wang",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th International Workshop on Advanced Patterning Solutions, IWAPS 2022 ; Conference date: 21-10-2022 Through 22-10-2022",
year = "2022",
doi = "10.1109/IWAPS57146.2022.9972248",
language = "英语",
series = "IWAPS 2022 - 2022 6th International Workshop on Advanced Patterning Solutions",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Yayi Wei and Tianchun Ye",
booktitle = "IWAPS 2022 - 2022 6th International Workshop on Advanced Patterning Solutions",
address = "美国",
}