Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix

Jianzhong Shi; Kaigui Zhu; Qingqi Zheng; Lide Zhang; Ling Ye; Jianxin Wu; Jian Zuo

doi:10.1063/1.118926

Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO₂ matrix

Jianzhong Shi^*
, Kaigui Zhu
, Qingqi Zheng
, Lide Zhang
, Ling Ye
, Jianxin Wu
, Jian Zuo

^*此作品的通讯作者

CAS - Institute of Solid State Physics
Fudan University
University of Science and Technology of China

科研成果: 期刊稿件 › 文章 › 同行评审

30 引用（Scopus）

摘要

InAs nanocrystals embedded in SiO₂ matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO₂ matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.

源语言	英语
页（从-至）	2586-2588
页数	3
期刊	Applied Physics Letters
卷	70
期	19
DOI	https://doi.org/10.1063/1.118926
出版状态	已出版 - 12 5月 1997
已对外发布	是

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title = "Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix",

abstract = "InAs nanocrystals embedded in SiO2 matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO2 matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.",

author = "Jianzhong Shi and Kaigui Zhu and Qingqi Zheng and Lide Zhang and Ling Ye and Jianxin Wu and Jian Zuo",

year = "1997",

month = may,

day = "12",

doi = "10.1063/1.118926",

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volume = "70",

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T1 - Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix

AU - Shi, Jianzhong

AU - Zhu, Kaigui

AU - Zheng, Qingqi

AU - Zhang, Lide

AU - Ye, Ling

AU - Wu, Jianxin

AU - Zuo, Jian

PY - 1997/5/12

Y1 - 1997/5/12

N2 - InAs nanocrystals embedded in SiO2 matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO2 matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.

AB - InAs nanocrystals embedded in SiO2 matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO2 matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.

UR - https://www.scopus.com/pages/publications/0000331229

U2 - 10.1063/1.118926

DO - 10.1063/1.118926

M3 - 文章

AN - SCOPUS:0000331229

SN - 0003-6951

VL - 70

SP - 2586

EP - 2588

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix

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Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO₂ matrix