TY - JOUR
T1 - Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin Current
AU - Li, Shen
AU - Lin, Xiaoyang
AU - Li, Pingzhi
AU - Zhao, Suteng
AU - Si, Zhizhong
AU - Wei, Guodong
AU - Koopmans, Bert
AU - Lavrijsen, Reinoud
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/8/23
Y1 - 2023/8/23
N2 - Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered one of the most promising candidates for future high-density on-chip solid-state memory. However, both the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from the above issues, which is driven by chirality switching (CS) and an ultralow spin-orbit-torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of the Dzyaloshinskii-Moriya interaction, which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated in the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM by micromagnetic simulations. Under the CS mechanism, a fast (∼102 m/s), ultralow energy (∼5 attoJoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetracks, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS causes it to “breathe” instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.
AB - Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered one of the most promising candidates for future high-density on-chip solid-state memory. However, both the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from the above issues, which is driven by chirality switching (CS) and an ultralow spin-orbit-torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of the Dzyaloshinskii-Moriya interaction, which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated in the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM by micromagnetic simulations. Under the CS mechanism, a fast (∼102 m/s), ultralow energy (∼5 attoJoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetracks, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS causes it to “breathe” instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.
KW - Dzyaloshinskii−Moriya interaction
KW - chirality switching
KW - domain wall motion
KW - racetrack memory
KW - ultralow power
UR - https://www.scopus.com/pages/publications/85168781224
U2 - 10.1021/acsami.3c06447
DO - 10.1021/acsami.3c06447
M3 - 文章
C2 - 37581258
AN - SCOPUS:85168781224
SN - 1944-8244
VL - 15
SP - 39946
EP - 39955
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 33
ER -