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Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification

  • Jingyan Zhang
  • , Guang Yang
  • , Shouguo Wang*
  • , Shilei Zhang
  • , Peng Zhang
  • , Xingzhong Cao
  • , Shaolong Jiang
  • , Chongjun Zhao
  • , Yang Liu
  • , Haicheng Wang
  • , Guanghua Yu
  • *此作品的通讯作者
  • University of Science and Technology Beijing
  • CAS - Institute of Physics
  • University of Oxford
  • CAS - Institute of High Energy Physics

科研成果: 期刊稿件文章同行评审

摘要

A large enhancement of anomalous Hall sensitivity (Sv) by metal/oxide interfacial modification is obtained in a MgO/[Co/Pt]3/MgO multilayered structure. The values of Sv are increased to 8363 V/A·T by CoO insertion and 2261 V/A·T by Pt insertion, while Sv is approximately 1000 V/A·T in normal Hall semiconductor sensors. Microstructural analysis shows that the crystal orientation of [Co/Pt]3 multilayers is improved, and the oxygen concentration is largely changed by introducing an ultrathin CoO layer at metal/oxide interfaces, leading to a large increment of Sv.

源语言英语
文章编号103007
期刊Applied Physics Express
6
10
DOI
出版状态已出版 - 10月 2013
已对外发布

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