摘要
A large enhancement of anomalous Hall sensitivity (Sv) by metal/oxide interfacial modification is obtained in a MgO/[Co/Pt]3/MgO multilayered structure. The values of Sv are increased to 8363 V/A·T by CoO insertion and 2261 V/A·T by Pt insertion, while Sv is approximately 1000 V/A·T in normal Hall semiconductor sensors. Microstructural analysis shows that the crystal orientation of [Co/Pt]3 multilayers is improved, and the oxygen concentration is largely changed by introducing an ultrathin CoO layer at metal/oxide interfaces, leading to a large increment of Sv.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 103007 |
| 期刊 | Applied Physics Express |
| 卷 | 6 |
| 期 | 10 |
| DOI | |
| 出版状态 | 已出版 - 10月 2013 |
| 已对外发布 | 是 |
指纹
探究 'Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification' 的科研主题。它们共同构成独一无二的指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver