TY - JOUR
T1 - Ultra-Dense Ring-Shaped Racetrack Memory Cache Design
AU - Wang, Guanda
AU - Zhang, Yue
AU - Zhang, Beibei
AU - Wu, Bi
AU - Nan, Jiang
AU - Zhang, Xueying
AU - Zhang, Zhizhong
AU - Klein, Jacques Olivier
AU - Ravelosona, Dafiné
AU - Wang, Zhaohao
AU - Zhang, Youguang
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2019/1
Y1 - 2019/1
N2 - Information storage and transfer via current-induced domain wall (DW) motions exhibit significant density-speed-energy advantages, which inspires numerous emerging devices and circuits, such as racetrack memory (RM). However, the bi-directional propagation of DWs in the conventional tape-shaped nanowire will lead to data overflow issue, implicitly deteriorating storage density and operational performances. In this paper, we propose a non-volatile cache design based on spin-orbit torque-driven ring-shaped RM. The systematical investigations, covering from device modeling, to circuits design, to bit-cell layout design, and to system evaluation have been carried out. Thanks to the cells-overlapping design, the proposed RM L2 cache can achieve 48 ×, 16 ×, and 8 × improvements in term of capacity, compared with iso-area caches based on static random access memory (SRAM), spin transfer torque magnetic RAM (STT-MRAM), and tape-shaped RM, respectively. As proved by 4-core system experiment results, the proposed RM cache can improve 30.7% instructions per cycle (IPC) and save 58.2% energy compared with SRAM cache.
AB - Information storage and transfer via current-induced domain wall (DW) motions exhibit significant density-speed-energy advantages, which inspires numerous emerging devices and circuits, such as racetrack memory (RM). However, the bi-directional propagation of DWs in the conventional tape-shaped nanowire will lead to data overflow issue, implicitly deteriorating storage density and operational performances. In this paper, we propose a non-volatile cache design based on spin-orbit torque-driven ring-shaped RM. The systematical investigations, covering from device modeling, to circuits design, to bit-cell layout design, and to system evaluation have been carried out. Thanks to the cells-overlapping design, the proposed RM L2 cache can achieve 48 ×, 16 ×, and 8 × improvements in term of capacity, compared with iso-area caches based on static random access memory (SRAM), spin transfer torque magnetic RAM (STT-MRAM), and tape-shaped RM, respectively. As proved by 4-core system experiment results, the proposed RM cache can improve 30.7% instructions per cycle (IPC) and save 58.2% energy compared with SRAM cache.
KW - L2 cache
KW - Racetrack memory
KW - high density
KW - ring-shaped
UR - https://www.scopus.com/pages/publications/85053107734
U2 - 10.1109/TCSI.2018.2866932
DO - 10.1109/TCSI.2018.2866932
M3 - 文章
AN - SCOPUS:85053107734
SN - 1549-8328
VL - 66
SP - 215
EP - 225
JO - IEEE Transactions on Circuits and Systems
JF - IEEE Transactions on Circuits and Systems
IS - 1
M1 - 8458153
ER -