@inproceedings{d56c420c2cb04ae9bc9c78a6cca4ecaf,
title = "Tunable Sensing Performance of Linear Perpendicular TMR Sensor",
abstract = "Magnetic tunnel junctions (MTJ) are engineered with the film stack of crossed magnetization pattern structure for perpendicular tunnel magneto-resistance (TMR) sensor application. The fabricated devices show good linearity and stability. The temperature dependence and the noise level of the sensor are also characterized. We demonstrate that the sensitivity and linear range of the perpendicular pinned TMR sensors can be tuned in quite a large range by controlling the free layer thickness. This research provides guidance for the design and process optimization of the perpendicular sensors.",
keywords = "free layer thickness and performance, perpendicular TMR sensor",
author = "Shaohua Yan and Zitong Zhou and Zhiqiang Cao and Yaodi Yang and Zhi Li and Weibin Chen and Qunwen Leng and Weisheng Zhao",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",
year = "2021",
month = apr,
day = "8",
doi = "10.1109/EDTM50988.2021.9420959",
language = "英语",
series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
address = "美国",
}