TY - JOUR
T1 - Tunable Magnetism in Transition-Metal-Decorated Phosphorene
AU - Sui, Xuelei
AU - Si, Chen
AU - Shao, Bin
AU - Zou, Xiaolong
AU - Wu, Jian
AU - Gu, Bing Lin
AU - Duan, Wenhui
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/5/7
Y1 - 2015/5/7
N2 - We present a density functional theory study of 3d transition-metal (TM) atoms (Sc-Zn) adsorbed on a phosphorene sheet. We show that due to the existence of lone pair electrons on P atoms in phosphorene, all the TM atoms, except the closed-shell Zn atom, can bond strongly to the phosphorene with sizable binding energies. Moreover, the TM@phosphorene systems for TM from Sc to Co exhibit interesting magnetic properties, which arise from the exchange splitting of the TM 3d orbitals. We also find that strain is an effective way to control the magnetism of TM@phosphorene systems by tuning the interaction of the TM with phosphorene and, thus, the relative positions of in-gap TM 3d orbitals. In particular, a small biaxial strain could induce a magnetic transition from a low-spin to a high-spin state in phosphorene decorated by Sc, V, or Mn. These results clearly establish the potential for phosphorene utilization in innovative spintronic devices. (Chemical Equation Presented).
AB - We present a density functional theory study of 3d transition-metal (TM) atoms (Sc-Zn) adsorbed on a phosphorene sheet. We show that due to the existence of lone pair electrons on P atoms in phosphorene, all the TM atoms, except the closed-shell Zn atom, can bond strongly to the phosphorene with sizable binding energies. Moreover, the TM@phosphorene systems for TM from Sc to Co exhibit interesting magnetic properties, which arise from the exchange splitting of the TM 3d orbitals. We also find that strain is an effective way to control the magnetism of TM@phosphorene systems by tuning the interaction of the TM with phosphorene and, thus, the relative positions of in-gap TM 3d orbitals. In particular, a small biaxial strain could induce a magnetic transition from a low-spin to a high-spin state in phosphorene decorated by Sc, V, or Mn. These results clearly establish the potential for phosphorene utilization in innovative spintronic devices. (Chemical Equation Presented).
UR - https://www.scopus.com/pages/publications/84928963638
U2 - 10.1021/jp5129468
DO - 10.1021/jp5129468
M3 - 文章
AN - SCOPUS:84928963638
SN - 1932-7447
VL - 119
SP - 10059
EP - 10063
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 18
ER -