Threshold voltage model of a double-gate MOSFET with Schottky source and drain

Bojuan Xu; Gang Du; Zhiliang Xia; Lang Zeng; Ruqi Han; Xiaoyan Liu

Threshold voltage model of a double-gate MOSFET with Schottky source and drain

Bojuan Xu^*
, Gang Du
, Zhiliang Xia
, Lang Zeng
, Ruqi Han
, Xiaoyan Liu

^*此作品的通讯作者

Peking University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation. The 2D potential distribution in the channel is calculated. An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition. The results of the model are verified by the numerical simulator DESSIS-ISE.

源语言	英语
页（从-至）	1179-1183
页数	5
期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
卷	28
期	8
出版状态	已出版 - 8月 2007
已对外发布	是

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@article{e8c90ff71fef49a6833bd0688aefdf3d,

title = "Threshold voltage model of a double-gate MOSFET with Schottky source and drain",

abstract = "A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation. The 2D potential distribution in the channel is calculated. An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition. The results of the model are verified by the numerical simulator DESSIS-ISE.",

keywords = "Double-gate, Schottky barrier, Threshold voltage",

author = "Bojuan Xu and Gang Du and Zhiliang Xia and Lang Zeng and Ruqi Han and Xiaoyan Liu",

year = "2007",

month = aug,

language = "英语",

volume = "28",

pages = "1179--1183",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "8",

}

TY - JOUR

T1 - Threshold voltage model of a double-gate MOSFET with Schottky source and drain

AU - Xu, Bojuan

AU - Du, Gang

AU - Xia, Zhiliang

AU - Zeng, Lang

AU - Han, Ruqi

AU - Liu, Xiaoyan

PY - 2007/8

Y1 - 2007/8

N2 - A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation. The 2D potential distribution in the channel is calculated. An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition. The results of the model are verified by the numerical simulator DESSIS-ISE.

AB - A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation. The 2D potential distribution in the channel is calculated. An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition. The results of the model are verified by the numerical simulator DESSIS-ISE.

KW - Double-gate

KW - Schottky barrier

KW - Threshold voltage

UR - https://www.scopus.com/pages/publications/34548504576

M3 - 文章

AN - SCOPUS:34548504576

SN - 0253-4177

VL - 28

SP - 1179

EP - 1183

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 8

ER -

Threshold voltage model of a double-gate MOSFET with Schottky source and drain

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