Thermoelectric transport properties of n-type tin sulfide

In this paper, n-type polycrystalline tin sulfide (SnS) was firstly synthesized through optimizing Br doping. Comparably, n-type crystalline SnS with optimized Br doping was prepared, which exhibits better thermoelectric performance than that in polycrystalline SnS over a wide temperature range due to higher carrier mobility. A maximum average dimensionless figure of merit (ZT) ~0.08 at 300–823 K was achieved in n-type SnS crystals, which is 2 times higher than that in polycrystalline SnS. This work provides an effective strategy to enhance performance of earth-abundant and low-cost n-type SnS through electron-doping, higher performance can be expected in crystalline form.