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Thermoelectric transport properties of BaBiTe3-based materials

  • Beihang University

科研成果: 期刊稿件文章同行评审

摘要

BaBiTe3, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe3 reaches 3.7 μW cm−1 K−2 which increased by 40% from undoped BaBiTe3. Besides high power factor, the thermal conductivity is also reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe3 is achieved in 3% La doped BaBiTe3.

源语言英语
页(从-至)131-135
页数5
期刊Journal of Solid State Chemistry
249
DOI
出版状态已出版 - 1 5月 2017

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