Thermodynamic modeling and phase diagrams of hexagonal and cubic GaN single-crystal film growth by ECR-PEMOCVD method

Based on thermodynamic equilibrium theory, a chemical equilibrium model for GaN growth is given in electron cyclotron resonance plasma enhanced metallorganic chemical vapor deposition (ECR-PEMOCVD) system. Calculation indicates that the growth driving force are functions of growth conditions: group III input partial pressure, input V/III ratio, and growth temperature. Furthermore, the growth phase diagrams of hexagonal and cubic GaN film growth are obtained, which are consistent with the experimental conditions to some extent. Through analysis, it is explained the reason that high temperature and high input V/III ratio are favorable for hexagonal GaN film growth. This model can be extended to the similar systems used for GaN single-crystal film growth.