TY - GEN
T1 - Thermal Stable and Fast Perpendicular Shape Anisotropy Magnetic Tunnel Junction
AU - Wang, Guanda
AU - Zhang, Yue
AU - Huang, Zhe
AU - Wang, Jinkai
AU - Zhang, Kun
AU - Zhang, Zhizhong
AU - Zhang, Youguang
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/7
Y1 - 2019/7
N2 - Spin transfer torque magnetic random access memory (STT-MRAM) has shown great potential in building future universal memory. However, the core of STT-MRAM, conventional perpendicular magnetization anisotropy (PMA) magnetic tunnel junction (MTJ) is facing challenges in keeping high thermal stability factor (ΔE), which is essential for reliable data storage. Despite solving the problem of ΔE, perpendicular shape anisotropy (PSA) MTJ still has drawbacks of slow STT switching and high breakdown risk. In this paper, we proposed a spin obit torque (SOT)-assisted-STT switching mechanism for PSA MTJ. A SIPCE model of PSA MTJ is developed. This model shows great agreements with experimental measurements. Besides, it is a very useful tool for circuit design and simulation. This model shows ΔE of PMA MTJ can be up to 70. Thanks to SOT-assisted-STT switching mechanism, the switching time can be greatly reduced. At last, simulations of non-volatile master flip-flop (NVMFF) circuit is performed to validate the device modeling.
AB - Spin transfer torque magnetic random access memory (STT-MRAM) has shown great potential in building future universal memory. However, the core of STT-MRAM, conventional perpendicular magnetization anisotropy (PMA) magnetic tunnel junction (MTJ) is facing challenges in keeping high thermal stability factor (ΔE), which is essential for reliable data storage. Despite solving the problem of ΔE, perpendicular shape anisotropy (PSA) MTJ still has drawbacks of slow STT switching and high breakdown risk. In this paper, we proposed a spin obit torque (SOT)-assisted-STT switching mechanism for PSA MTJ. A SIPCE model of PSA MTJ is developed. This model shows great agreements with experimental measurements. Besides, it is a very useful tool for circuit design and simulation. This model shows ΔE of PMA MTJ can be up to 70. Thanks to SOT-assisted-STT switching mechanism, the switching time can be greatly reduced. At last, simulations of non-volatile master flip-flop (NVMFF) circuit is performed to validate the device modeling.
KW - Magnetic tunnel junction
KW - Non-volatile master flip-flop
KW - Perpendicular shape anisotropy
KW - Spin obit torque
UR - https://www.scopus.com/pages/publications/85084953478
U2 - 10.1109/NANOARCH47378.2019.181282
DO - 10.1109/NANOARCH47378.2019.181282
M3 - 会议稿件
AN - SCOPUS:85084953478
T3 - NANOARCH 2019 - 15th IEEE/ACM International Symposium on Nanoscale Architectures, Proceedings
BT - NANOARCH 2019 - 15th IEEE/ACM International Symposium on Nanoscale Architectures, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2019
Y2 - 17 July 2019 through 19 July 2019
ER -