TY - GEN
T1 - Thermal Modeling and Improvement of 2.5D Chiplet-based Heterogeneous System with Thermal Through Silicon Via
AU - Shi, Wen
AU - Wang, Yijiao
AU - Wu, Jiayao
AU - Zou, Tao
AU - Liu, Ruotong
AU - Zhang, Hui
AU - Liu, Fei
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - 2.5D chiplet-based systems, integrating heterogeneous chiplets manufactured at disparate technology nodes, have emerged as a promising solution for balancing cost and performance. However, thermal management remains a critical challenge. This study systematically investigates thermal-aware design optimization for chiplet-based systems through placement strategy analysis and thermal through silicon via (TTSV) parameters optimization. Six distinct chiplet placements are evaluated for a nine-chiplets system using finite element method (FEM) thermal simulations. Subsequent TTSV parametric analysis reveals an inverse correlation between via density and peak operating temperature, showing up to 15.5% thermal reduction in high-power scenarios. Simulation data identify feasible TTSV configurations (via-to-area ratio vs. peak temperature) within safe operating limits. This work provides empirical guidance for early-stage thermal design, emphasizing the interplay between chiplet and vertical interconnect density to ensure both performance and reliability in advanced packaging architectures.
AB - 2.5D chiplet-based systems, integrating heterogeneous chiplets manufactured at disparate technology nodes, have emerged as a promising solution for balancing cost and performance. However, thermal management remains a critical challenge. This study systematically investigates thermal-aware design optimization for chiplet-based systems through placement strategy analysis and thermal through silicon via (TTSV) parameters optimization. Six distinct chiplet placements are evaluated for a nine-chiplets system using finite element method (FEM) thermal simulations. Subsequent TTSV parametric analysis reveals an inverse correlation between via density and peak operating temperature, showing up to 15.5% thermal reduction in high-power scenarios. Simulation data identify feasible TTSV configurations (via-to-area ratio vs. peak temperature) within safe operating limits. This work provides empirical guidance for early-stage thermal design, emphasizing the interplay between chiplet and vertical interconnect density to ensure both performance and reliability in advanced packaging architectures.
KW - 2.5D integrated system
KW - chiplet placement
KW - thermal modeling
KW - thermal through silicon via(TTSV)
UR - https://www.scopus.com/pages/publications/105014239352
U2 - 10.1109/ISEDA65950.2025.11101238
DO - 10.1109/ISEDA65950.2025.11101238
M3 - 会议稿件
AN - SCOPUS:105014239352
T3 - 2025 International Symposium of Electronics Design Automation, ISEDA 2025
SP - 584
EP - 589
BT - 2025 International Symposium of Electronics Design Automation, ISEDA 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2025 International Symposium of Electronics Design Automation, ISEDA 2025
Y2 - 9 May 2025 through 12 May 2025
ER -