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Thermal impedance of SiGe HBTs: Characterization and modeling

  • Xiaodi Jin*
  • , Guangsheng Liang
  • , Yves Zimmermann
  • , Gerhard Fischer
  • , Christoph Weimer
  • , Mario Krattenmacher
  • , Yaxin Zhang
  • , Michael Schroter
  • *此作品的通讯作者
  • Technische Universität Dresden
  • Innovations for High Performance Microelectronics

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Electro-thermal characterization of SiGe HBTs was performed for different operating points. Small-signal simulations with a single-pole and various multi-pole thermal networks are compared with measured data over a wide frequency range. The results show that nodal and recursive thermal networks are unable to match the measured phase of the thermal impedance Zth, while Foster, Cauer and Cauer-type recursive thermal networks are more accurate and flexible for modeling Zth. Furthermore, a guide for the usage of different networks upon the phase of Zth is provided.

源语言英语
主期刊名2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781665491327
DOI
出版状态已出版 - 2022
已对外发布
活动2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022 - Phoenix, 美国
期限: 16 10月 202219 10月 2022

出版系列

姓名2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022

会议

会议2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022
国家/地区美国
Phoenix
时期16/10/2219/10/22

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