@inproceedings{64b53325c40649cf82b3a603af8c4308,
title = "Thermal Finite Element Simulation of Ultrafine Pitch Chip-to-Wafer Hybrid Bonding",
abstract = "Cu/SiO2 hybrid bonding is a promising solution for three-dimensional(3D) integration because it can achieve ultrafine pitch interconnection. This paper design and simulate the expansion and shrinkage of Cu caused by temperature change during annealing by finite element analysis. The effect of pad shape/size/depth, initial dishing depth, and annealing temperature of Cu pad on the expansion deformation are studied in detail. In addition to the deformation, emphasis is placed on the peeling stress, which includes SiO2 interface peeling caused by the Cu expansion in the heating stage and Cu interface peeling caused by the Cu shrinkage in the cooling stage. These two peeling stresses bring the risk of interfacial de-bonding respectively. Especially, the pad arrangement arrays of triangular, square and hexagon are designed to study the difference of overall interface stress distribution.",
keywords = "Cu dishing, Finite element analysis, Hybrid bonding, Peeling stress, Ultrafine pitch",
author = "Weimin Liu and Ziyu Liu and Yang Wang and Lin Chen and Qingqing Sun and Zhang, \{David Wei\}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 24th International Conference on Electronic Packaging Technology, ICEPT 2023 ; Conference date: 08-08-2023 Through 11-08-2023",
year = "2023",
doi = "10.1109/ICEPT59018.2023.10492074",
language = "英语",
series = "2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023",
address = "美国",
}