TY - GEN
T1 - Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions
AU - Gong, Xiaojing
AU - Zhang, Jingping
AU - Xu, Ke
AU - Wang, Zhigao
AU - Yang, Hui
AU - Yu, Rong
AU - Zhan, Wei
PY - 2011
Y1 - 2011
N2 - Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which allows for new device concepts. However, essential parameters that determine the electronic quality of the wires, and which have not been controlled yet for the III-V compound semiconductors, are the wire crystal structure and the stacking fault density. In this paper, we have used the molecular dynamics simulations to study the formation of the stacking faults in GaN NW along [0001] and [11-20] directions. The results show that under same growth condition the GaN NW along [0001] has stacking fault while there is no stacking fault in GaN NW along [11-20]. We have analysis the possible reason and further study is underway.
AB - Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which allows for new device concepts. However, essential parameters that determine the electronic quality of the wires, and which have not been controlled yet for the III-V compound semiconductors, are the wire crystal structure and the stacking fault density. In this paper, we have used the molecular dynamics simulations to study the formation of the stacking faults in GaN NW along [0001] and [11-20] directions. The results show that under same growth condition the GaN NW along [0001] has stacking fault while there is no stacking fault in GaN NW along [11-20]. We have analysis the possible reason and further study is underway.
KW - Gallium nitride nanowire
KW - Molecular dynamics simulations
KW - Stacking faults
UR - https://www.scopus.com/pages/publications/79960455731
U2 - 10.4028/www.scientific.net/AMR.268-270.950
DO - 10.4028/www.scientific.net/AMR.268-270.950
M3 - 会议稿件
AN - SCOPUS:79960455731
SN - 9783037851555
T3 - Advanced Materials Research
SP - 950
EP - 954
BT - Computational Materials Science, CMS 2011
T2 - 2011 International Conference on Computational Materials Science, CMS 2011
Y2 - 17 April 2011 through 18 April 2011
ER -