摘要
A beam-wave interaction model for G-band rectangular beam extended-interaction klystron (EIK) with unequal-length slots is proposed and analyzed to achieve high output power and broad bandwidth. The length ratio of long slot with short slot is carefully optimized to obtain a large effective characteristic impedance and wide mode separation. The influence of beam tunnel size on the effective characteristic impedance is studied with the beam aspect ratio of 2.3:1. The beam conductance for 5-gap, 7-gap, and 11-gap cavities are analyzed theoretically to optimize the beam-wave interaction stability. Furthermore, beam current and input power are investigated to obtain high performance. The analysis of fabrication tolerance and alignment tolerance indicates that less than 5- μm machining precision is required. With beam current of 0.40 A and voltage of 16.5 kV, 3-D PIC simulation predicts peak power of 1139 W and 3-dB bandwidth of 1.15 GHz, with efficiency of 17.3% and gain of 37.5 dB. In addition, PIC simulations are compared with 1-D AJDISK calculations, the approximate results with similar tendencies indicate that our proposed beam-wave interaction model for G-band EIK is relatively reliable.
| 源语言 | 英语 |
|---|---|
| 期刊论文编号 | 8395295 |
| 页(从-至) | 3500-3506 |
| 页数 | 7 |
| 期刊 | IEEE Transactions on Electron Devices |
| 卷 | 65 |
| 期 | 8 |
| DOI | |
| 出版状态 | 已出版 - 8月 2018 |
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