Theoretical analysis of stresses in interface of bonded wafers

Zhen Zhou; Xijun Kong; Yongqing Huang; Xiaomin Ren

Theoretical analysis of stresses in interface of bonded wafers

Zhen Zhou^*
, Xijun Kong
, Yongqing Huang
, Xiaomin Ren

^*此作品的通讯作者

Beijing University of Posts and Telecommunications

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

The theoretical distribution of stresses in the interface of bonded wafers and thin films subjected to uniform heating or cooling are studied according to the theory of stresses arising in bimetal strips. The characteristics of distribution of the shearing stresses, as well as normal and peeling stresses which influence the quality of bonded wafers are discussed.

源语言	英语
页（从-至）	1176-1179
页数	4
期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
卷	24
期	11
出版状态	已出版 - 11月 2003
已对外发布	是

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title = "Theoretical analysis of stresses in interface of bonded wafers",

abstract = "The theoretical distribution of stresses in the interface of bonded wafers and thin films subjected to uniform heating or cooling are studied according to the theory of stresses arising in bimetal strips. The characteristics of distribution of the shearing stresses, as well as normal and peeling stresses which influence the quality of bonded wafers are discussed.",

keywords = "Bonding, Normal stress, Peeling stress, Shearing stress",

author = "Zhen Zhou and Xijun Kong and Yongqing Huang and Xiaomin Ren",

year = "2003",

month = nov,

language = "英语",

volume = "24",

pages = "1176--1179",

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TY - JOUR

T1 - Theoretical analysis of stresses in interface of bonded wafers

AU - Zhou, Zhen

AU - Kong, Xijun

AU - Huang, Yongqing

AU - Ren, Xiaomin

PY - 2003/11

Y1 - 2003/11

N2 - The theoretical distribution of stresses in the interface of bonded wafers and thin films subjected to uniform heating or cooling are studied according to the theory of stresses arising in bimetal strips. The characteristics of distribution of the shearing stresses, as well as normal and peeling stresses which influence the quality of bonded wafers are discussed.

AB - The theoretical distribution of stresses in the interface of bonded wafers and thin films subjected to uniform heating or cooling are studied according to the theory of stresses arising in bimetal strips. The characteristics of distribution of the shearing stresses, as well as normal and peeling stresses which influence the quality of bonded wafers are discussed.

KW - Bonding

KW - Normal stress

KW - Peeling stress

KW - Shearing stress

UR - https://www.scopus.com/pages/publications/1942445426

M3 - 文章

AN - SCOPUS:1942445426

SN - 0253-4177

VL - 24

SP - 1176

EP - 1179

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 11

ER -

Theoretical analysis of stresses in interface of bonded wafers

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