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The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

  • Cheng Lin Heng
  • , Wen Yong Su
  • , Q. W. Zhang
  • , X. Q. Ren
  • , P. G. Yin
  • , H. P. Pan
  • , S. D. Yao
  • , Terje G. Finstad
  • Beijing Institute of Technology
  • Beihang University
  • Peking University
  • University of Oslo

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon oxide films with different Si excess. After annealing the films in N2, strong PL were observed from Eu and Yb3+ ions and their intensities are correlated. The PL intensity of Eu is mainly from 3+ for no and relatively low temperature anneals (<900 °C) while the Eu2+ emission is dominating for annealing at 1000 °C or above in the co-doped Si-rich oxide films. Transmission electron microscopy shows amorphous (Eu, Yb, Si, O)-containing precipitates in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence.

源语言英语
主期刊名Materials Science and Engineering Technology
出版商Trans Tech Publications Ltd
207-211
页数5
ISBN(印刷版)9783038351023
DOI
出版状态已出版 - 2014
活动2014 International Conference on Materials Science and Engineering Technology, MSET 2014 - Shanghai, 中国
期限: 28 6月 201429 6月 2014

出版系列

姓名Advanced Materials Research
936
ISSN(印刷版)1022-6680
ISSN(电子版)1662-8985

会议

会议2014 International Conference on Materials Science and Engineering Technology, MSET 2014
国家/地区中国
Shanghai
时期28/06/1429/06/14

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