摘要
The hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition(PECVD). The as-deposited films were annealed, and the microstructure and mechanical properties were investigated by XRD, Raman spectra and nanoindenter. The results show that the crystallinity, hardness and elastic modulus have been improved when annealing at 400°C, but the mechanical properties became worse when annealing at 600°C.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 012016 |
| 期刊 | Journal of Physics: Conference Series |
| 卷 | 152 |
| DOI | |
| 出版状态 | 已出版 - 2009 |
指纹
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