The effect of ion implantation on the characteristics of oxide formation of copper thin films

Er Min Wang; Xiao Zhen Wang; Xin Qing Zhao

The effect of ion implantation on the characteristics of oxide formation of copper thin films

Er Min Wang
, Xiao Zhen Wang
, Xin Qing Zhao

Beijing Institute of Aeronautical Materials

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Using X-ray diffraction and Rutherford back-scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation. It is indicated that the implantation of Cr ions remarkably changes the Oxidation behavior and the copper oxide structures. Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu₂0 to CuO. The formation mechanism of oxides before and after implantation was discussed.

源语言	英语
页（从-至）	39-40+46
期刊	Journal of Materials Engineering
期	8
出版状态	已出版 - 2000
已对外发布	是

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title = "The effect of ion implantation on the characteristics of oxide formation of copper thin films",

abstract = "Using X-ray diffraction and Rutherford back-scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation. It is indicated that the implantation of Cr ions remarkably changes the Oxidation behavior and the copper oxide structures. Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu20 to CuO. The formation mechanism of oxides before and after implantation was discussed.",

keywords = "Copper thin films, Ion implantation, Oxidation",

author = "Wang, \{Er Min\} and Wang, \{Xiao Zhen\} and Zhao, \{Xin Qing\}",

year = "2000",

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TY - JOUR

T1 - The effect of ion implantation on the characteristics of oxide formation of copper thin films

AU - Wang, Er Min

AU - Wang, Xiao Zhen

AU - Zhao, Xin Qing

PY - 2000

Y1 - 2000

N2 - Using X-ray diffraction and Rutherford back-scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation. It is indicated that the implantation of Cr ions remarkably changes the Oxidation behavior and the copper oxide structures. Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu20 to CuO. The formation mechanism of oxides before and after implantation was discussed.

AB - Using X-ray diffraction and Rutherford back-scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation. It is indicated that the implantation of Cr ions remarkably changes the Oxidation behavior and the copper oxide structures. Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu20 to CuO. The formation mechanism of oxides before and after implantation was discussed.

KW - Copper thin films

KW - Ion implantation

KW - Oxidation

UR - https://www.scopus.com/pages/publications/71149111442

M3 - 文章

AN - SCOPUS:71149111442

SN - 1001-4381

SP - 39-40+46

JO - Journal of Materials Engineering

JF - Journal of Materials Engineering

IS - 8

ER -

The effect of ion implantation on the characteristics of oxide formation of copper thin films

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