The colossal dielectric properties of FeNbO4

Q. J. Li; S. Q. Xia; X. Y. Wang; W. Xia; Y. Yu; Y. M. Cui; J. Zhang; J. Zheng; C. Cheng; Y. D. Li; H. Wang; S. G. Huang; C. C. Wang

doi:10.1016/j.jallcom.2014.07.104

The colossal dielectric properties of FeNbO₄

Q. J. Li^*
, S. Q. Xia
, X. Y. Wang
, W. Xia
, Y. Yu
, Y. M. Cui
, J. Zhang
, J. Zheng
, C. Cheng
, Y. D. Li
, H. Wang
, S. G. Huang
, C. C. Wang

^*此作品的通讯作者

物理学院

Anhui University
Hefei University of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

27 引用（Scopus）

摘要

The dielectric properties of FeNbO₄ ceramics were systematically investigated in the frequency range from 100 Hz to 5 MHz and temperature from 75 to 300 K. It is observed that the sample exhibits colossal dielectric behavior and three dielectric relaxations. Both the low- and middle-temperature relaxations were found to be bulk effect related to localized carriers hopping. It is revealed that the low temperature relaxation is caused by the hopping motion of the self-trapped electrons and the middle temperature relaxation is related to the electrons hopping between Fe²⁺ and Fe³⁺ ions. By means of complex impedance analysis the high-temperature relaxation was argued to originate from Maxwell-Wagner relaxation due to grain boundary response.

源语言	英语
页（从-至）	577-580
页数	4
期刊	Journal of Alloys and Compounds
卷	616
DOI	https://doi.org/10.1016/j.jallcom.2014.07.104
出版状态	已出版 - 15 12月 2014

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10.1016/j.jallcom.2014.07.104

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title = "The colossal dielectric properties of FeNbO4",

abstract = "The dielectric properties of FeNbO4 ceramics were systematically investigated in the frequency range from 100 Hz to 5 MHz and temperature from 75 to 300 K. It is observed that the sample exhibits colossal dielectric behavior and three dielectric relaxations. Both the low- and middle-temperature relaxations were found to be bulk effect related to localized carriers hopping. It is revealed that the low temperature relaxation is caused by the hopping motion of the self-trapped electrons and the middle temperature relaxation is related to the electrons hopping between Fe2+ and Fe3+ ions. By means of complex impedance analysis the high-temperature relaxation was argued to originate from Maxwell-Wagner relaxation due to grain boundary response.",

keywords = "Ceramics, Dielectric properties, Maxwell-Wagner relaxation, Polaronic relaxation",

author = "Li, \{Q. J.\} and Xia, \{S. Q.\} and Wang, \{X. Y.\} and W. Xia and Y. Yu and Cui, \{Y. M.\} and J. Zhang and J. Zheng and C. Cheng and Li, \{Y. D.\} and H. Wang and Huang, \{S. G.\} and Wang, \{C. C.\}",

year = "2014",

month = dec,

day = "15",

doi = "10.1016/j.jallcom.2014.07.104",

language = "英语",

volume = "616",

pages = "577--580",

journal = "Journal of Alloys and Compounds",

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TY - JOUR

T1 - The colossal dielectric properties of FeNbO4

AU - Li, Q. J.

AU - Xia, S. Q.

AU - Wang, X. Y.

AU - Xia, W.

AU - Yu, Y.

AU - Cui, Y. M.

AU - Zhang, J.

AU - Zheng, J.

AU - Cheng, C.

AU - Li, Y. D.

AU - Wang, H.

AU - Huang, S. G.

AU - Wang, C. C.

PY - 2014/12/15

Y1 - 2014/12/15

N2 - The dielectric properties of FeNbO4 ceramics were systematically investigated in the frequency range from 100 Hz to 5 MHz and temperature from 75 to 300 K. It is observed that the sample exhibits colossal dielectric behavior and three dielectric relaxations. Both the low- and middle-temperature relaxations were found to be bulk effect related to localized carriers hopping. It is revealed that the low temperature relaxation is caused by the hopping motion of the self-trapped electrons and the middle temperature relaxation is related to the electrons hopping between Fe2+ and Fe3+ ions. By means of complex impedance analysis the high-temperature relaxation was argued to originate from Maxwell-Wagner relaxation due to grain boundary response.

AB - The dielectric properties of FeNbO4 ceramics were systematically investigated in the frequency range from 100 Hz to 5 MHz and temperature from 75 to 300 K. It is observed that the sample exhibits colossal dielectric behavior and three dielectric relaxations. Both the low- and middle-temperature relaxations were found to be bulk effect related to localized carriers hopping. It is revealed that the low temperature relaxation is caused by the hopping motion of the self-trapped electrons and the middle temperature relaxation is related to the electrons hopping between Fe2+ and Fe3+ ions. By means of complex impedance analysis the high-temperature relaxation was argued to originate from Maxwell-Wagner relaxation due to grain boundary response.

KW - Ceramics

KW - Dielectric properties

KW - Maxwell-Wagner relaxation

KW - Polaronic relaxation

UR - https://www.scopus.com/pages/publications/84906249169

U2 - 10.1016/j.jallcom.2014.07.104

DO - 10.1016/j.jallcom.2014.07.104

M3 - 文章

AN - SCOPUS:84906249169

SN - 0925-8388

VL - 616

SP - 577

EP - 580

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

The colossal dielectric properties of FeNbO4

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The colossal dielectric properties of FeNbO₄