TY - JOUR
T1 - Tensile response of (1 1 0) twist grain boundaries in tungsten
T2 - A molecular dynamics study
AU - Feng, Ya Xin
AU - Shang, Jia Xiang
AU - Qin, Sheng Jian
N1 - Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/3
Y1 - 2019/3
N2 - Molecular dynamics simulations are performed to investigate the tensile behavior of W bicrystals with different twist grain boundaries (TGBs): the low-angle grain boundary (LAGB), the ordinary high-angle grain boundary (HAGB) and the Σ3 TGB. Owing to the initial hexagonal dislocation network (HDN), the LAGB can directly emit dislocations without dislocation nucleation: the [Formula presented]〈111〉 dislocations in HDN are pinned by bilateral nodes or 〈001〉 dislocations and form Frank-Rend dislocation sources, which continually emit dislocations and remain the structure of HDN under tensile loading. Once the HDN become disordered, Frank-Rend dislocation sources are broken and dislocations in HDN can be directly emitted. In the ordinary HAGB and Σ3 TGB, dislocations are nucleated from interfaces accompanied with apparent stress decrease at nucleation sites. Supplied with enough stress, emitted dislocations can freely pass through adjacent boundaries. By measuring dislocation densities, we find that the Σ3 TGB becomes more active at high temperature and easier to nucleate dislocations, while the LAGB and ordinary HAGB are less affected by temperature. Besides, it is found that [Formula presented]〈111〉 dislocations play a dominate role in the plastic deformation of W bicrystals regardless of TGB structures and temperature.
AB - Molecular dynamics simulations are performed to investigate the tensile behavior of W bicrystals with different twist grain boundaries (TGBs): the low-angle grain boundary (LAGB), the ordinary high-angle grain boundary (HAGB) and the Σ3 TGB. Owing to the initial hexagonal dislocation network (HDN), the LAGB can directly emit dislocations without dislocation nucleation: the [Formula presented]〈111〉 dislocations in HDN are pinned by bilateral nodes or 〈001〉 dislocations and form Frank-Rend dislocation sources, which continually emit dislocations and remain the structure of HDN under tensile loading. Once the HDN become disordered, Frank-Rend dislocation sources are broken and dislocations in HDN can be directly emitted. In the ordinary HAGB and Σ3 TGB, dislocations are nucleated from interfaces accompanied with apparent stress decrease at nucleation sites. Supplied with enough stress, emitted dislocations can freely pass through adjacent boundaries. By measuring dislocation densities, we find that the Σ3 TGB becomes more active at high temperature and easier to nucleate dislocations, while the LAGB and ordinary HAGB are less affected by temperature. Besides, it is found that [Formula presented]〈111〉 dislocations play a dominate role in the plastic deformation of W bicrystals regardless of TGB structures and temperature.
KW - Dislocation
KW - Molecular dynamics simulation
KW - Tensile response
KW - Tungsten
KW - Twist grain boundary
UR - https://www.scopus.com/pages/publications/85058622963
U2 - 10.1016/j.commatsci.2018.12.028
DO - 10.1016/j.commatsci.2018.12.028
M3 - 文章
AN - SCOPUS:85058622963
SN - 0927-0256
VL - 159
SP - 265
EP - 272
JO - Computational Materials Science
JF - Computational Materials Science
ER -