Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

Yuan Zhang; Yonghao Zheng; Huiqiong Zhou; Mao Sheng Miao; Fred Wudl; Thuc Quyen Nguyen

doi:10.1002/adma.201502404

Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

Yuan Zhang
, Yonghao Zheng
, Huiqiong Zhou
, Mao Sheng Miao
, Fred Wudl^*
, Thuc Quyen Nguyen

^*此作品的通讯作者

化学学院

University of California at Santa Barbara
CNSI Joint Center
Tohoku University
National Center for Nanoscience and Technology
Department of Chemistry and Biochemistry
California State University Northridge
China Academy of Engineering Physics
Center for Polymers and Organic Solids

科研成果: 期刊稿件 › 文章 › 同行评审

77 引用（Scopus）

摘要

FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I_off) in the transistors.

源语言	英语
页（从-至）	7412-7419
页数	8
期刊	Advanced Materials
卷	27
期	45
DOI	https://doi.org/10.1002/adma.201502404
出版状态	已出版 - 2 12月 2015

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title = "Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices",

abstract = "FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (Ioff) in the transistors.",

keywords = "diradicaloid, electrical conductivity, self-doping, thermal activation",

author = "Yuan Zhang and Yonghao Zheng and Huiqiong Zhou and Miao, \{Mao Sheng\} and Fred Wudl and Nguyen, \{Thuc Quyen\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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AU - Zhang, Yuan

AU - Zheng, Yonghao

AU - Zhou, Huiqiong

AU - Miao, Mao Sheng

AU - Wudl, Fred

AU - Nguyen, Thuc Quyen

PY - 2015/12/2

Y1 - 2015/12/2

N2 - FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (Ioff) in the transistors.

AB - FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (Ioff) in the transistors.

KW - diradicaloid

KW - electrical conductivity

KW - self-doping

KW - thermal activation

UR - https://www.scopus.com/pages/publications/84949215367

U2 - 10.1002/adma.201502404

DO - 10.1002/adma.201502404

M3 - 文章

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SP - 7412

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JO - Advanced Materials

JF - Advanced Materials

IS - 45

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Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

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