Temperature sensor of high-sensitivity based on nested ring resonator by Vernier effect

A temperature sensor based on nested ring resonator (NRR) by Vernier effect is proposed and theoretically demonstrated with larger sensitivity. This configuration, on a standard silicon-on-insulator (SOI) chip, consists of a single ring resonator acting as the reference, and a NRR acting as the sensor, which can simultaneously achieve higher quality factor (Q) and larger free spectrum range (FSR) compared with single ring. By adjusting parameters of the NRR, the sensitivity of the whole structure can be 10.611 nm/K, two orders of magnitude larger than that of the single NRR.