Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

Zhijian Hu; Yanjun Bao; Ziwei Li; Yongji Gong; Rui Feng; Yingdong Xiao; Xiaochun Wu; Zhaohui Zhang; Xing Zhu; Pulickel M. Ajayan; Zheyu Fang

doi:10.1016/j.scib.2016.11.002

Temperature dependent Raman and photoluminescence of vertical WS₂/MoS₂ monolayer heterostructures

Zhijian Hu
, Yanjun Bao
, Ziwei Li
, Yongji Gong
, Rui Feng
, Yingdong Xiao
, Xiaochun Wu
, Zhaohui Zhang
, Xing Zhu
, Pulickel M. Ajayan
, Zheyu Fang^*

^*此作品的通讯作者

National Center for Nanoscience and Technology
Peking University
Rice University

科研成果: 期刊稿件 › 文章 › 同行评审

50 引用（Scopus）

摘要

Heterostructures from two-dimensional transition-metal dichalcogenides MX₂ have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS₂/MoS₂ monolayer heterostructures. Our result shows that both E¹_2g and A_1g modes of WS₂ and MoS₂ vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor.

源语言	英语
页（从-至）	16-21
页数	6
期刊	Science Bulletin
卷	62
期	1
DOI	https://doi.org/10.1016/j.scib.2016.11.002
出版状态	已出版 - 2017
已对外发布	是

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10.1016/j.scib.2016.11.002

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@article{8a10416634c649b1819caeda3c7ae9bc,

title = "Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures",

abstract = "Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E12g and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor.",

keywords = "Heterostructures, Photoluminescence, Raman spectra, Temperature-dependent, Transition metal dichalcogenides",

author = "Zhijian Hu and Yanjun Bao and Ziwei Li and Yongji Gong and Rui Feng and Yingdong Xiao and Xiaochun Wu and Zhaohui Zhang and Xing Zhu and Ajayan, \{Pulickel M.\} and Zheyu Fang",

note = "Publisher Copyright: {\textcopyright} 2016 Science China Press",

year = "2017",

doi = "10.1016/j.scib.2016.11.002",

language = "英语",

volume = "62",

pages = "16--21",

journal = "Science Bulletin",

issn = "2095-9273",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

AU - Hu, Zhijian

AU - Bao, Yanjun

AU - Li, Ziwei

AU - Gong, Yongji

AU - Feng, Rui

AU - Xiao, Yingdong

AU - Wu, Xiaochun

AU - Zhang, Zhaohui

AU - Zhu, Xing

AU - Ajayan, Pulickel M.

AU - Fang, Zheyu

PY - 2017

Y1 - 2017

N2 - Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E12g and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor.

AB - Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E12g and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor.

KW - Heterostructures

KW - Photoluminescence

KW - Raman spectra

KW - Temperature-dependent

KW - Transition metal dichalcogenides

UR - https://www.scopus.com/pages/publications/85019219836

U2 - 10.1016/j.scib.2016.11.002

DO - 10.1016/j.scib.2016.11.002

M3 - 文章

AN - SCOPUS:85019219836

SN - 2095-9273

VL - 62

SP - 16

EP - 21

JO - Science Bulletin

JF - Science Bulletin

IS - 1

ER -

Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

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Temperature dependent Raman and photoluminescence of vertical WS₂/MoS₂ monolayer heterostructures