Synthesis of large-scale few-layer PtS ₂ films by chemical vapor deposition

PtS ₂ , a group-10 transition metal dichalcogenide, has prominent layer-depended band structure, and can enable extremely high phonon-limited mobility at room temperature. Here, we demonstrate the theoretical study on the electronic band structures of PtS ₂ with different thickness by using density functional theory (DFT), as well as experimental realization of large-area synthesis of few-layer PtS ₂ film by direct sulfurization of pre-deposited Pt. The synthetic process suggested that the reaction pressure is a key factor in the formation of high-quality PtS ₂ semiconducting films. Characterizations with atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) have indicated that good film stoichiometry and uniformity have been achieved. Furthermore, field-effect transistor (FET) arrays were fabricated based on the large-scale PtS ₂ film, exhibiting well-uniform electrical performance with p-type transport behavior. These results can open up an attractive approach to promote the large-scale applications of PtS ₂ in advanced nanoelectronics and optoelectronics devices and systems.