Synthesis and characteristics of p-CuAlO ₂/n-Si heterostructure

In this paper the CuAlO ₂/Si heterostructure was synthesized by the radio-frequency magnetron sputtering. The CuAlO ₂thin film tends to be oriented on the (001) surface. The positive Hall coefficient confirms p-type nature of the film and the value of hole concentration is found to be around 3.6 × 10 ¹⁵ cm ^-3. The contact between the n- and p-type semiconductors was found to be rectifying within the measured temperature range from 320 to 120 K, and the diffusion potential increases with decreasing temperature. The ratio of forward current over the reverse current exceeds 35 within the range of applied voltages of -1.5 to +1.5 V and the turn-on voltage is about 0.5 V.