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Symmetry-enforced topological Dirac semimetal for giant spin–orbit torque with ultralow power dissipation

  • Xuan Zheng
  • , Siyang Peng
  • , Xuejiao Chen
  • , Bin Lao
  • , Yamin Han
  • , Liguang Gong
  • , Tao Tang
  • , Keyi Wu
  • , Yan Sun
  • , Peitao Liu
  • , Xianfeng Hao
  • , Youguo Shi
  • , Nicholas C. Plumb
  • , Ming Shi
  • , Tao Wu
  • , Shouzhong Peng
  • , Xing Qiu Chen
  • , Zhicheng Zhong
  • , Milan Radovic*
  • , Run Wei Li*
  • Zhiming Wang*
*此作品的通讯作者
  • CAS - Ningbo Institute of Material Technology and Engineering
  • New Materials Institute
  • University of Nottingham Ningbo China
  • University of Science and Technology of China
  • School of Photoelectric Engineering
  • Changzhou Institute of Technology
  • CAS - Institute of Metal Research
  • Key Laboratory of Applied Chemistry
  • Yanshan University
  • CAS - Institute of Physics
  • Paul Scherrer Institute
  • Center for Condensed Matter and School of Physics
  • Zhejiang University
  • Eastern Institute of Technology, Ningbo
  • Center of Materials Science and Optoelectronics Engineering
  • University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Current-driven spin–orbit torque (SOT) enables electrical control of magnetization for next-generation memory and logic, but reducing switching current and power consumption is still a major challenge. Topological semimetals provide an attractive platform because they combine metallic conductivity with topological states that can efficiently generate spin currents. However, while most studied systems rely on accidental band inversions, the SOT response of symmetry-enforced Dirac semimetals remains largely unexplored. Here, we demonstrate that the non-symmorphic symmetry-enforced Dirac semimetal hexagonal SrIrO3 exhibits record-high SOT efficiency. In situ angle-resolved photoemission spectroscopy on high-quality epitaxial thin films directly confirmed the topological Dirac semimetal state, revealing bulk Dirac points near the Fermi level and spin–momentum locked surface states. Leveraging these synergistic features, we achieve a very high SOT efficiency of 2.26 and a substantial spin Hall conductivity of 0.96 × 105 ((Formula presented) - /2e) Ω−1 m−1, enabling perpendicular magnetization switching at an exceptionally low current density of 5.9 × 105 A/cm2. Our findings establish symmetry-enforced topological semimetals as a robust materials platform for achieving superior charge–spin conversion, opening a pathway toward ultra-low-power spintronic devices.

源语言英语
期刊National Science Review
卷13
期7
DOI
出版状态已出版 - 4 2月 2026

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