摘要
We have studied the correlation between the valence electron configuration and the electronic structure of M2AC(0 0 0 1) surfaces (M = Ti, V, Cr; A = Al, Ga, Ge) by density functional theory. The A surface termination is the most stable configuration for all systems studied according to our surface energy data. As the M valence electron population is increased, the surface energy increases by 22% and 12% for A = Al and Ga, respectively, while it decreases by 29% for A = Ge. This can be understood by evaluating the valence electron concentration induced changes in the surface density of states. Antibonding surface Md-Ap states are present as Ti is substituted by Cr in M2AC(0 0 0 1) for A = Al and Ga, while antibonding surface Md-Ap states are not present as Ti is substituted by Cr in M2GeC(0 0 0 1).
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 896-899 |
| 页数 | 4 |
| 期刊 | Surface Science |
| 卷 | 601 |
| 期 | 4 |
| DOI | |
| 出版状态 | 已出版 - 15 2月 2007 |
| 已对外发布 | 是 |
指纹
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