TY - JOUR
T1 - Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection
AU - Xiang, Yutong
AU - Wang, Chong
AU - Liu, Chunsen
AU - Wang, Tanjun
AU - Jiang, Yongbo
AU - Wang, Yang
AU - Wang, Shuiyuan
AU - Zhou, Peng
N1 - Publisher Copyright:
© The Author(s) 2025.
PY - 2025/5/1
Y1 - 2025/5/1
N2 - The pursuit of non-volatile memory with program speeds below one nanosecond, beyond the capabilities of non-volatile flash and high-speed volatile static random-access memory, remains a longstanding challenge in the field of memory technology1. Utilizing fundamental physics innovation enabled by advanced materials, series of emerging memories2, 3, 4–5 are being developed to overcome the speed bottleneck of non-volatile memory. As the most extensively applied non-volatile memory, the speed of flash is limited by the low efficiency of the electric-field-assisted program, with reported speeds6, 7, 8, 9–10 much slower than sub-one nanosecond. Here we report a two-dimensional Dirac graphene-channel flash memory based on a two-dimensional-enhanced hot-carrier-injection mechanism, supporting both electron and hole injection. The Dirac channel flash shows a program speed of 400 picoseconds, non-volatile storage and robust endurance over 5.5 × 106 cycles. Our results confirm that the thin-body channel can optimize the horizontal electric-field (Ey) distribution, and the improved Ey-assisted program efficiency increases the injection current to 60.4 pA μm−1 at |VDS| = 3.7 V. We also find that the two-dimensional semiconductor tungsten diselenide has two-dimensional-enhanced hot-hole injection, but with different injection behaviour. This work demonstrates that the speed of non-volatile flash memory can exceed that of the fastest volatile static random-access memory with the same channel length.
AB - The pursuit of non-volatile memory with program speeds below one nanosecond, beyond the capabilities of non-volatile flash and high-speed volatile static random-access memory, remains a longstanding challenge in the field of memory technology1. Utilizing fundamental physics innovation enabled by advanced materials, series of emerging memories2, 3, 4–5 are being developed to overcome the speed bottleneck of non-volatile memory. As the most extensively applied non-volatile memory, the speed of flash is limited by the low efficiency of the electric-field-assisted program, with reported speeds6, 7, 8, 9–10 much slower than sub-one nanosecond. Here we report a two-dimensional Dirac graphene-channel flash memory based on a two-dimensional-enhanced hot-carrier-injection mechanism, supporting both electron and hole injection. The Dirac channel flash shows a program speed of 400 picoseconds, non-volatile storage and robust endurance over 5.5 × 106 cycles. Our results confirm that the thin-body channel can optimize the horizontal electric-field (Ey) distribution, and the improved Ey-assisted program efficiency increases the injection current to 60.4 pA μm−1 at |VDS| = 3.7 V. We also find that the two-dimensional semiconductor tungsten diselenide has two-dimensional-enhanced hot-hole injection, but with different injection behaviour. This work demonstrates that the speed of non-volatile flash memory can exceed that of the fastest volatile static random-access memory with the same channel length.
UR - https://www.scopus.com/pages/publications/105003373841
U2 - 10.1038/s41586-025-08839-w
DO - 10.1038/s41586-025-08839-w
M3 - 文章
C2 - 40240599
AN - SCOPUS:105003373841
SN - 0028-0836
VL - 641
SP - 90
EP - 97
JO - Nature
JF - Nature
IS - 8061
ER -