Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

Wei Wensheng; Wang Tianmin; Zhang Chunxi; Li Guohua; Li Yuexia

doi:10.1016/S0042-207X(03)00034-4

Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

Wei Wensheng^*
, Wang Tianmin
, Zhang Chunxi
, Li Guohua
, Li Yuexia

^*此作品的通讯作者

仪器科学与光电工程学院

Beihang University
CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.

源语言	英语
页（从-至）	465-469
页数	5
期刊	Vacuum
卷	71
期	4
DOI	https://doi.org/10.1016/S0042-207X(03)00034-4
出版状态	已出版 - 25 7月 2003

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title = "Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction",

abstract = "Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.",

keywords = "(p)nc-Si:H/(n)c-Si heterojunction, Variable capacitance diode, nc-Si:H film",

author = "Wei Wensheng and Wang Tianmin and Zhang Chunxi and Li Guohua and Li Yuexia",

year = "2003",

month = jul,

day = "25",

doi = "10.1016/S0042-207X(03)00034-4",

language = "英语",

volume = "71",

pages = "465--469",

journal = "Vacuum",

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TY - JOUR

T1 - Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

AU - Wensheng, Wei

AU - Tianmin, Wang

AU - Chunxi, Zhang

AU - Guohua, Li

AU - Yuexia, Li

PY - 2003/7/25

Y1 - 2003/7/25

N2 - Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.

AB - Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.

KW - (p)nc-Si:H/(n)c-Si heterojunction

KW - Variable capacitance diode

KW - nc-Si:H film

UR - https://www.scopus.com/pages/publications/0038790371

U2 - 10.1016/S0042-207X(03)00034-4

DO - 10.1016/S0042-207X(03)00034-4

M3 - 文章

AN - SCOPUS:0038790371

SN - 0042-207X

VL - 71

SP - 465

EP - 469

JO - Vacuum

JF - Vacuum

IS - 4

ER -

Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

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