TY - GEN
T1 - Study on the structural and photoluminescence properties of Er-doped ZnO films
AU - Wei, Guoke
AU - Wang, Jinliang
AU - Xu, Hengxing
AU - Tang, Ning
AU - Fan, Chao
PY - 2010
Y1 - 2010
N2 - ZnO films and their Er-doped films oriented in c-axis were prepared on silicon substrate(100) by frequency magnetron sputtering method, and they were taken in heat treatment. Then, the influences on the surface morphologies and crystal structures of the film samples, which were made by the different annealing temperatures and doping concentrations, were analyzed through observing the treatment of SEM and XRD. Their luminescence properties were observed by photoluminescence spectra. The results show that Er-doping enhanced the room temperature UV emission of films. The sample has the strongest luminescence intensity, when the annealing temperature is 800°C and the doping concentration is 2%.
AB - ZnO films and their Er-doped films oriented in c-axis were prepared on silicon substrate(100) by frequency magnetron sputtering method, and they were taken in heat treatment. Then, the influences on the surface morphologies and crystal structures of the film samples, which were made by the different annealing temperatures and doping concentrations, were analyzed through observing the treatment of SEM and XRD. Their luminescence properties were observed by photoluminescence spectra. The results show that Er-doping enhanced the room temperature UV emission of films. The sample has the strongest luminescence intensity, when the annealing temperature is 800°C and the doping concentration is 2%.
UR - https://www.scopus.com/pages/publications/77951660309
U2 - 10.1109/INEC.2010.5424906
DO - 10.1109/INEC.2010.5424906
M3 - 会议稿件
AN - SCOPUS:77951660309
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1284
EP - 1285
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -