Study on the antireflection properties of ITO thin film in visible region

Ren Ying Li; Ming Wang; Guo Bo Dong; Fang Yuan Gao; Fang Tang; Mei Wang; Xun Gang Diao

Study on the antireflection properties of ITO thin film in visible region

Ren Ying Li
, Ming Wang
, Guo Bo Dong^*
, Fang Yuan Gao
, Fang Tang
, Mei Wang
, Xun Gang Diao

^*此作品的通讯作者

Beihang University

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

SiO₂ antireflection films were prepared on the PMMA substrates by MPS unipolar pulsed magnetron sputtering, and the optimal antireflection effect of SiO₂ film was achieved by adjusting the sputtering time. And then the ITO thin films were prepared with the different sputtering time, and the visible light transmittance, the sheet resistance and infrared emissivity of ITO/SiO₂ thin films were systematically investigated. The results show that the average visible light transmittance of the antireflection film increases by around 6%, and the average light transmittance of ITO thin film is over 80% for less than 60 min of sputtering time. Furthermore, the sheet resistance and infrared emissivity of the antireflection film change small.

源语言	英语
页（从-至）	2252-2257
页数	6
期刊	Rengong Jingti Xuebao/Journal of Synthetic Crystals
卷	42
期	11
出版状态	已出版 - 11月 2013

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@article{155d2e1f8e984428a2e8b1013e7e8804,

title = "Study on the antireflection properties of ITO thin film in visible region",

abstract = "SiO2 antireflection films were prepared on the PMMA substrates by MPS unipolar pulsed magnetron sputtering, and the optimal antireflection effect of SiO2 film was achieved by adjusting the sputtering time. And then the ITO thin films were prepared with the different sputtering time, and the visible light transmittance, the sheet resistance and infrared emissivity of ITO/SiO2 thin films were systematically investigated. The results show that the average visible light transmittance of the antireflection film increases by around 6\%, and the average light transmittance of ITO thin film is over 80\% for less than 60 min of sputtering time. Furthermore, the sheet resistance and infrared emissivity of the antireflection film change small.",

keywords = "Antireflection, ITO thin film, SiO thin film",

author = "Li, \{Ren Ying\} and Ming Wang and Dong, \{Guo Bo\} and Gao, \{Fang Yuan\} and Fang Tang and Mei Wang and Diao, \{Xun Gang\}",

year = "2013",

month = nov,

language = "英语",

volume = "42",

pages = "2252--2257",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "11",

}

TY - JOUR

T1 - Study on the antireflection properties of ITO thin film in visible region

AU - Li, Ren Ying

AU - Wang, Ming

AU - Dong, Guo Bo

AU - Gao, Fang Yuan

AU - Tang, Fang

AU - Wang, Mei

AU - Diao, Xun Gang

PY - 2013/11

Y1 - 2013/11

N2 - SiO2 antireflection films were prepared on the PMMA substrates by MPS unipolar pulsed magnetron sputtering, and the optimal antireflection effect of SiO2 film was achieved by adjusting the sputtering time. And then the ITO thin films were prepared with the different sputtering time, and the visible light transmittance, the sheet resistance and infrared emissivity of ITO/SiO2 thin films were systematically investigated. The results show that the average visible light transmittance of the antireflection film increases by around 6%, and the average light transmittance of ITO thin film is over 80% for less than 60 min of sputtering time. Furthermore, the sheet resistance and infrared emissivity of the antireflection film change small.

AB - SiO2 antireflection films were prepared on the PMMA substrates by MPS unipolar pulsed magnetron sputtering, and the optimal antireflection effect of SiO2 film was achieved by adjusting the sputtering time. And then the ITO thin films were prepared with the different sputtering time, and the visible light transmittance, the sheet resistance and infrared emissivity of ITO/SiO2 thin films were systematically investigated. The results show that the average visible light transmittance of the antireflection film increases by around 6%, and the average light transmittance of ITO thin film is over 80% for less than 60 min of sputtering time. Furthermore, the sheet resistance and infrared emissivity of the antireflection film change small.

KW - Antireflection

KW - ITO thin film

KW - SiO thin film

UR - https://www.scopus.com/pages/publications/84891053255

M3 - 文章

AN - SCOPUS:84891053255

SN - 1000-985X

VL - 42

SP - 2252

EP - 2257

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 11

ER -

Study on the antireflection properties of ITO thin film in visible region

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