Study on oxidation behavior of copper thin films by ion implantation

A metal vapor vacuum arc (MEVVA) ion source was used to investigate the effect of Cr implantation on the oxidation resistance, conductivity and oxide formation characteristics of copper thin films. By X-ray diffraction, Rutherford back-scattering and scanning electron microscopy techniques, a study has been made of the evolution of the structures and morphologies of copper oxides on the thin films. The shallow implantation of Cr can enhances the oxidation resistance of copper thin films. However, the implantation has no remarkable influence on the conductivity of the films, but changes the oxidation behavior and structure of copper oxides. In the present paper, the mechanism associated with the effects of implantation on the structure and morphology of copper oxide was discussed.