Study on electrical transport mechanism of doped NC-Si:H film

Tianmini Wang; Wensheng Wei; Gangyi Xu; Chunxi Zhang

doi:10.1142/s0217979202015285

Study on electrical transport mechanism of doped NC-Si:H film

Tianmini Wang
, Wensheng Wei^*
, Gangyi Xu
, Chunxi Zhang

^*此作品的通讯作者

仪器科学与光电工程学院

Beihang University
Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.

源语言	英语
页（从-至）	4289-4293
页数	5
期刊	International Journal of Modern Physics B
卷	16
期	28-29
DOI	https://doi.org/10.1142/s0217979202015285
出版状态	已出版 - 20 11月 2002

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abstract = "Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.",

author = "Tianmini Wang and Wensheng Wei and Gangyi Xu and Chunxi Zhang",

year = "2002",

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doi = "10.1142/s0217979202015285",

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T1 - Study on electrical transport mechanism of doped NC-Si:H film

AU - Wang, Tianmini

AU - Wei, Wensheng

AU - Xu, Gangyi

AU - Zhang, Chunxi

PY - 2002/11/20

Y1 - 2002/11/20

N2 - Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.

AB - Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.

UR - https://www.scopus.com/pages/publications/0037146237

U2 - 10.1142/s0217979202015285

DO - 10.1142/s0217979202015285

M3 - 文章

AN - SCOPUS:0037146237

SN - 0217-9792

VL - 16

SP - 4289

EP - 4293

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

IS - 28-29

ER -

Study on electrical transport mechanism of doped NC-Si:H film

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