Study of transition metal silicides thin film epitaxial growth on silicon substrate

Transition metal (TM)-silicon contact systems have received special interest because of their importance in Schottky barrier formation, epitaxial growth, device reliability, refractoriness, etc. The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry. Transition metal silicides were grown by solid phase reaction (SPR) for thin Cr, Mn, Fe films on n-Si (100) substrate systems. The formation of silicides from the reaction between deposited thin metal films and Si substrates at thermally annealling. They were identified by either X-ray diffraction (XRD) or soft X-ray emission spectroscopy (SXES). From these results it can be concluded that those silicides's thin films grow with single phase on the silicon substrate.