TY - JOUR
T1 - Structure of the Ge-Sb-Te phase-change materials studied by theory and experiment
AU - Sun, Zhimei
AU - Kyrsta, Stepan
AU - Music, Denis
AU - Ahuja, Rajeev
AU - Schneider, Jochen M.
PY - 2007/7
Y1 - 2007/7
N2 - We have studied the structure of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 compounds using theoretical and experimental means. Based on ab initio calculations, we propose the stacking sequence in the [111] direction of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 phases to be Te-Ge-Te-Sb-Te-v-Te-Sb-, Te-Ge-Te-Sb-Te-v-Te-Sb-Te-Sb-Te-v-Te-Sb-, and Te-Ge-Te-Ge-Te-Sb-Te-v-Te-Sb-Te-Ge-, respectively, where v is an ordered vacancy layer. This structural model agrees with the X-ray diffraction data of sputter-deposited Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 thin films.
AB - We have studied the structure of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 compounds using theoretical and experimental means. Based on ab initio calculations, we propose the stacking sequence in the [111] direction of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 phases to be Te-Ge-Te-Sb-Te-v-Te-Sb-, Te-Ge-Te-Sb-Te-v-Te-Sb-Te-Sb-Te-v-Te-Sb-, and Te-Ge-Te-Ge-Te-Sb-Te-v-Te-Sb-Te-Ge-, respectively, where v is an ordered vacancy layer. This structural model agrees with the X-ray diffraction data of sputter-deposited Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 thin films.
KW - A. Ge-Sb-Te thin films
KW - C. Crystal structure and symmetry
KW - D. Electronic band structure
UR - https://www.scopus.com/pages/publications/34250801498
U2 - 10.1016/j.ssc.2007.05.018
DO - 10.1016/j.ssc.2007.05.018
M3 - 文章
AN - SCOPUS:34250801498
SN - 0038-1098
VL - 143
SP - 240
EP - 244
JO - Solid State Communications
JF - Solid State Communications
IS - 4-5
ER -