Structural and physical properties of Mg-doped CuAlO2 thin films

Guobo Dong; Ming Zhang; Wei Lan; Peiming Dong; Hui Yan

doi:10.1016/j.vacuum.2008.04.010

Structural and physical properties of Mg-doped CuAlO₂ thin films

Guobo Dong
, Ming Zhang^*
, Wei Lan
, Peiming Dong
, Hui Yan

^*此作品的通讯作者

Beijing University of Technology
Lanzhou University

科研成果: 期刊稿件 › 文章 › 同行评审

60 引用（Scopus）

摘要

The CuAl_1-xMg_xO₂ (x = 0, 0.01, 0.02 and 0.05) thin films were successfully deposited on quartz substrate by using the RF magnetron sputtering technique. XRD patterns indicate that the delafossite structure could be guaranteed for all CuAl_1-xMg_xO₂ films. The conductivity measured at room temperature for CuAl_0.98Mg_0.02O₂ film is three orders of magnitude higher than that of undoped CuAlO₂ film and the band gaps of CuAl_1-xMg_xO₂ (x = 0, 0.01, 0.02 and 0.05) thin films decrease with the increase of the doping concentration, which is related to the formation of impurity energy levels with increasing the doping concentration.

源语言	英语
页（从-至）	1321-1324
页数	4
期刊	Vacuum
卷	82
期	11
DOI	https://doi.org/10.1016/j.vacuum.2008.04.010
出版状态	已出版 - 19 6月 2008
已对外发布	是

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title = "Structural and physical properties of Mg-doped CuAlO2 thin films",

abstract = "The CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films were successfully deposited on quartz substrate by using the RF magnetron sputtering technique. XRD patterns indicate that the delafossite structure could be guaranteed for all CuAl1-xMgxO2 films. The conductivity measured at room temperature for CuAl0.98Mg0.02O2 film is three orders of magnitude higher than that of undoped CuAlO2 film and the band gaps of CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films decrease with the increase of the doping concentration, which is related to the formation of impurity energy levels with increasing the doping concentration.",

keywords = "Band gap, Conductivity, CuAlO films, Doping concentrations",

author = "Guobo Dong and Ming Zhang and Wei Lan and Peiming Dong and Hui Yan",

year = "2008",

month = jun,

day = "19",

doi = "10.1016/j.vacuum.2008.04.010",

language = "英语",

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pages = "1321--1324",

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TY - JOUR

T1 - Structural and physical properties of Mg-doped CuAlO2 thin films

AU - Dong, Guobo

AU - Zhang, Ming

AU - Lan, Wei

AU - Dong, Peiming

AU - Yan, Hui

PY - 2008/6/19

Y1 - 2008/6/19

N2 - The CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films were successfully deposited on quartz substrate by using the RF magnetron sputtering technique. XRD patterns indicate that the delafossite structure could be guaranteed for all CuAl1-xMgxO2 films. The conductivity measured at room temperature for CuAl0.98Mg0.02O2 film is three orders of magnitude higher than that of undoped CuAlO2 film and the band gaps of CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films decrease with the increase of the doping concentration, which is related to the formation of impurity energy levels with increasing the doping concentration.

AB - The CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films were successfully deposited on quartz substrate by using the RF magnetron sputtering technique. XRD patterns indicate that the delafossite structure could be guaranteed for all CuAl1-xMgxO2 films. The conductivity measured at room temperature for CuAl0.98Mg0.02O2 film is three orders of magnitude higher than that of undoped CuAlO2 film and the band gaps of CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films decrease with the increase of the doping concentration, which is related to the formation of impurity energy levels with increasing the doping concentration.

KW - Band gap

KW - Conductivity

KW - CuAlO films

KW - Doping concentrations

UR - https://www.scopus.com/pages/publications/46549086534

U2 - 10.1016/j.vacuum.2008.04.010

DO - 10.1016/j.vacuum.2008.04.010

M3 - 文章

AN - SCOPUS:46549086534

SN - 0042-207X

VL - 82

SP - 1321

EP - 1324

JO - Vacuum

JF - Vacuum

IS - 11

ER -

Structural and physical properties of Mg-doped CuAlO2 thin films

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Structural and physical properties of Mg-doped CuAlO₂ thin films