Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) a substrate

We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311) A substrates. Atomic force microscopic result shows that QDs on (311) A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. The photoluminescence (PL) intensity, peak position and the full width at half rnaxinum (FWHM) are all closely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.