Stable nitride complex and molecular nitrogen in N doped amorphous Ge 2 Sb2 Te5

Zhimei Sun; Jian Zhou; Hyun Joon Shin; Andreas Blomqvist; Rajeev Ahuja

doi:10.1063/1.3052046

Stable nitride complex and molecular nitrogen in N doped amorphous Ge ₂ Sb₂ Te₅

Zhimei Sun^*
, Jian Zhou
, Hyun Joon Shin
, Andreas Blomqvist
, Rajeev Ahuja

^*此作品的通讯作者

Xiamen University
Pohang University of Science and Technology
Uppsala University

科研成果: 期刊稿件 › 文章 › 同行评审

36 引用（Scopus）

摘要

Nitrogen doping is identified to be a sufficient way to reduce the power consumption of Ge₂ Sb₂ Te₅, a phase-change material for data storage. On the basis of ab initio molecular dynamics simulations, we show that the doped N in amorphous Ge₂ Sb₂ Te₅ coexist as Ge(Sb, Te)N complex and N₂, and high density of the film produces more N₂. Furthermore, both Ge(Sb, Te)N complex and N₂ are stable upon annealing at 600 K.

源语言	英语
期刊论文编号	241908
期刊	Applied Physics Letters
卷	93
期	24
DOI	https://doi.org/10.1063/1.3052046
出版状态	已出版 - 2008
已对外发布	是

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abstract = "Nitrogen doping is identified to be a sufficient way to reduce the power consumption of Ge2 Sb2 Te5, a phase-change material for data storage. On the basis of ab initio molecular dynamics simulations, we show that the doped N in amorphous Ge2 Sb2 Te5 coexist as Ge(Sb, Te)N complex and N2, and high density of the film produces more N2. Furthermore, both Ge(Sb, Te)N complex and N2 are stable upon annealing at 600 K.",

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AU - Sun, Zhimei

AU - Zhou, Jian

AU - Shin, Hyun Joon

AU - Blomqvist, Andreas

AU - Ahuja, Rajeev

PY - 2008

Y1 - 2008

N2 - Nitrogen doping is identified to be a sufficient way to reduce the power consumption of Ge2 Sb2 Te5, a phase-change material for data storage. On the basis of ab initio molecular dynamics simulations, we show that the doped N in amorphous Ge2 Sb2 Te5 coexist as Ge(Sb, Te)N complex and N2, and high density of the film produces more N2. Furthermore, both Ge(Sb, Te)N complex and N2 are stable upon annealing at 600 K.

AB - Nitrogen doping is identified to be a sufficient way to reduce the power consumption of Ge2 Sb2 Te5, a phase-change material for data storage. On the basis of ab initio molecular dynamics simulations, we show that the doped N in amorphous Ge2 Sb2 Te5 coexist as Ge(Sb, Te)N complex and N2, and high density of the film produces more N2. Furthermore, both Ge(Sb, Te)N complex and N2 are stable upon annealing at 600 K.

UR - https://www.scopus.com/pages/publications/57849113217

U2 - 10.1063/1.3052046

DO - 10.1063/1.3052046

M3 - 文章

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

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Stable nitride complex and molecular nitrogen in N doped amorphous Ge 2 Sb2 Te5

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Stable nitride complex and molecular nitrogen in N doped amorphous Ge ₂ Sb₂ Te₅