Spintronic Neuromorphic Devices

Neuromorphic computing systems have drawn extensive attention due to their massive parallelism, the combination of storage and computation, high energy efficiency, and inherent tolerance to fault and variation. Spintronic devices, which exploit both the charge and spin properties of electrons for information processing and storage, are considered as one of the most promising candidates owing to their low power, nearly infinite endurance, good scalability, and compatibility with the complementary metal oxide semiconductor (CMOS) technology. In this chapter, the development of spintronic devices, such as magnetic tunnel junction (MTJ), spintronic memristor, skyrmion, and spin torque oscillator (STO), that mimic the functionalities of the biological synapses and neurons for neuromorphic computing is reviewed, and the challenges that need to be addressed in future research are discussed.