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Spin transfer torque memories and logic gates

  • Beihang University
  • CNRS

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Traditional memory and logic gates are suffering the dilemma of power dissipation rising when the CMOS technology scales down to 40 nm node. By integrating the spin property of electrons, spintronics becomes an emerging technology to overcome definitively this bottleneck. In particular, the magnetic tunnel junction (MTJ) nanopillar combining with spin transfer torque (STT) switching mechanism has become a promising candidate to build novel low power integrated circuits thanks to its fast access speed, no-volatility and infinite endurance. This paper will describe the principle of STT and review its recent development for memories and logic gates. Related performance comparisons and physical challenges will be also outlined and discussed.

源语言英语
主期刊名Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
编辑Jia Zhou, Ting-Ao Tang
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781479932962
DOI
出版状态已出版 - 23 1月 2014
活动2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, 中国
期限: 28 10月 201431 10月 2014

出版系列

姓名Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

会议

会议2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
国家/地区中国
Guilin
时期28/10/1431/10/14

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