Spatial alignment evolution of self-assembled In                         0.4                         Ga                         0.6                         As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy

H. Z. Xu; K. Akahane; H. Z. Song; Y. Okada; M. Kawabe

doi:10.1016/S0169-4332(01)00741-3

Spatial alignment evolution of self-assembled In _0.4 Ga _0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy

H. Z. Xu^*
, K. Akahane
, H. Z. Song
, Y. Okada
, M. Kawabe

^*此作品的通讯作者

University of Tsukuba

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4 引用（Scopus）

摘要

Self-assembled In _0.4 Ga _0.6 As island arrays have been grown on (3 1 1)B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to [0 1 -1] and [-2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1)B substrate.

源语言	英语
页（从-至）	92-98
页数	7
期刊	Applied Surface Science
卷	185
期	1-2
DOI	https://doi.org/10.1016/S0169-4332(01)00741-3
出版状态	已出版 - 28 12月 2001
已对外发布	是

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Xu, H. Z., Akahane, K., Song, H. Z., Okada, Y., & Kawabe, M. (2001). Spatial alignment evolution of self-assembled In _0.4 Ga _0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy Applied Surface Science, 185(1-2), 92-98. https://doi.org/10.1016/S0169-4332(01)00741-3

Xu, H. Z. ; Akahane, K. ; Song, H. Z. 等. / Spatial alignment evolution of self-assembled In _0.4 Ga _0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy 在: Applied Surface Science. 2001 ; 卷 185, 号码 1-2. 页码 92-98.

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title = " Spatial alignment evolution of self-assembled In 0.4 Ga 0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy ",

abstract = " Self-assembled In 0.4 Ga 0.6 As island arrays have been grown on (3 1 1)B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to [0 1 -1] and [-2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1)B substrate.",

keywords = "A1, low-dimensional structures, A3, molecular beam epitaxy, B2, semiconducting III-V materials",

author = "Xu, \{H. Z.\} and K. Akahane and Song, \{H. Z.\} and Y. Okada and M. Kawabe",

year = "2001",

month = dec,

day = "28",

doi = "10.1016/S0169-4332(01)00741-3",

language = "英语",

volume = "185",

pages = "92--98",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-2",

}

Xu, HZ, Akahane, K, Song, HZ, Okada, Y & Kawabe, M 2001, ' Spatial alignment evolution of self-assembled In _0.4 Ga _0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy ', Applied Surface Science, 卷 185, 号码 1-2, 页码 92-98. https://doi.org/10.1016/S0169-4332(01)00741-3

Spatial alignment evolution of self-assembled In _0.4 Ga _0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy . / Xu, H. Z.; Akahane, K.; Song, H. Z. 等.
在: Applied Surface Science, 卷 185, 号码 1-2, 28.12.2001, 页码 92-98.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - Spatial alignment evolution of self-assembled In 0.4 Ga 0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy

AU - Xu, H. Z.

AU - Akahane, K.

AU - Song, H. Z.

AU - Okada, Y.

AU - Kawabe, M.

PY - 2001/12/28

Y1 - 2001/12/28

N2 - Self-assembled In 0.4 Ga 0.6 As island arrays have been grown on (3 1 1)B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to [0 1 -1] and [-2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1)B substrate.

AB - Self-assembled In 0.4 Ga 0.6 As island arrays have been grown on (3 1 1)B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to [0 1 -1] and [-2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1)B substrate.

KW - A1, low-dimensional structures

KW - A3, molecular beam epitaxy

KW - B2, semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/0035965953

U2 - 10.1016/S0169-4332(01)00741-3

DO - 10.1016/S0169-4332(01)00741-3

M3 - 文章

AN - SCOPUS:0035965953

SN - 0169-4332

VL - 185

SP - 92

EP - 98

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-2

ER -

Xu HZ, Akahane K, Song HZ, Okada Y, Kawabe M. Spatial alignment evolution of self-assembled In _0.4 Ga _0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy Applied Surface Science. 2001 12月 28;185(1-2):92-98. doi: 10.1016/S0169-4332(01)00741-3

Spatial alignment evolution of self-assembled In 0.4 Ga 0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy

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Spatial alignment evolution of self-assembled In _0.4 Ga _0.6 As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy