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Solder layer voids failure criteria of insulated gate bipolar transistor modules based on thermal network model

  • Beihang University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Insulated gate bipolar transistor (IGBT) module is a component with high current density and considerable power dissipation in a power system. Any void in the solder layer below the chip will raise the junction temperature dramatically. The increment of junction temperature can cause many issues that affect the reliability of the device, and even directly leads to device failure. In the paper, a three-dimensional lumped-element thermal network model of the IGBT module is constructed to study the effect of voids on the junction temperature. The model consists of many basic elements that are interconnected, and the element is modeled as a block composed of a central node surrounded by six thermal resistances. The thermal resistance is determined by geometrical dimensions and material property of the element. The thermal network model is revised and verified by the results of thermal measurements and finite element (FE) simulations. The voids are simulated by deleting corresponding elements, and some failure criteria are drawn by analyzing the results of simulation studies. The failure criteria can be used for screening procedures and are significant for reliability assurance of IGBT modules.

源语言英语
主期刊名Proceedings of the 29th European Safety and Reliability Conference, ESREL 2019
编辑Michael Beer, Enrico Zio
出版商Research Publishing Services
1963-1969
页数7
ISBN(电子版)9789811127243
DOI
出版状态已出版 - 2020
活动29th European Safety and Reliability Conference, ESREL 2019 - Hannover, 德国
期限: 22 9月 201926 9月 2019

出版系列

姓名Proceedings of the 29th European Safety and Reliability Conference, ESREL 2019

会议

会议29th European Safety and Reliability Conference, ESREL 2019
国家/地区德国
Hannover
时期22/09/1926/09/19

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