@inproceedings{31147c2a059d4c22ab86b5749efe33a1,
title = "Soft Error Sensitivity of Magnetic Random Access Memory and Its Radiation Hardening Design",
abstract = "Spin-orbit torque magnetic random access memory (SOT-MRAM) has been considered as a candidate for the next-generation memory thanks to its ultrafast switching speed, zero static power consumption, and nearly unlimited endurance. However, the pulse width of writing current in the SOT-MRAM is comparable to that of radiation-induced current in spatial environments. Especially, the SOT-MRAM consists of nano-scale devices and may suffer from soft errors induced by multiple-bit upset (MBU). In this paper, we analyze the sensitivity to soft errors of SOT-MRAM. Then we review the radiation hardening technologies of MRAM and summary the highlighted issues, which will contribute to the integration of MRAM into aerospace and avionics electronics in hostile environments.",
keywords = "MBU, SEU, SOT-MRAM, radiationhardening technology, soft error",
author = "Bi Wang and Zhaohao Wang and Min Wang and Weisheng Zhao and Liang Wang and Yuanfu Zhao",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 18th International System-on-Chip Design Conference, ISOCC 2021 ; Conference date: 06-10-2021 Through 09-10-2021",
year = "2021",
doi = "10.1109/ISOCC53507.2021.9613876",
language = "英语",
series = "Proceedings - International SoC Design Conference 2021, ISOCC 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "199--200",
booktitle = "Proceedings - International SoC Design Conference 2021, ISOCC 2021",
address = "美国",
}