@inproceedings{7bb73fcea0154c008d51e62438c1e28c,
title = "Simulation on plasma doping for shallow junction formation",
abstract = "Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.",
author = "Min Yu and Huihui Ji and Ming Li and Ru Huang and Xing Zhang",
year = "2008",
doi = "10.1109/IWJT.2008.4540008",
language = "英语",
isbn = "9781424417384",
series = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",
pages = "14--19",
booktitle = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",
note = "IWJT-2008 - International Workshop on Junction Technology ; Conference date: 15-05-2008 Through 16-05-2008",
}